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LightSmyth光柵
Lightsmyth成立于2000年，致力于納米產品的開發創新。2007年，lightsmyth的高性能衍射光柵在光通信、國防和生物科技市場中獲得市場認可。直到今天，lightsmyth所提供的超過100多種優化的光柵產品廣泛應用于各種領域。lightsmyth產品和創新是圍繞全息衍射原理，通過結合先進的半導體模型工具如深紫外線（DUV）步進電機制造中的應用/掃描儀進行生產制造。
Lightsmyth是納米光子學創新產品開發的領導者。創新包括超高效率的偏振不敏感光柵的電信產品線，硅基板等超低散射高質量功能先進的衍射光柵。
LightSmyth熔融石英和高強度介電薄膜生產透射光柵，采用業界當前先進投影光刻基板和和反應性離子蝕刻技術。這種高保真半導體制造方法使用專有衍射光柵設計，實現效率精確接近100％，線間距控制到百萬分之一。綜合量產制造的成本效益考慮，沒有其他的光柵技術能夠達到lightsmyth這種程度的性能。正因為對設計和技術的不懈追求，LightSmyth的光柵具有很寬的波長范圍，并且可以調整入射角進一步得到更高性能。
高寬帶高衍射效率
低偏振靈敏度
功能卓越，均勻刻線槽
僅采用熔融石英和高強度電介質，無聚合物
非常高的環境穩定性，通過Tellcordia質量認證
每個光柵均為母光柵：低散射，無重影
大的通光區域：直徑可達140毫米
非常有競爭力的價格
嚴格的質量控制：通過ISO9001:2008質量體系認證
高級透射光柵（電信）-光通信高效率偏振無關透射光柵
透射光柵是使透射光形成光譜的光柵。LightSmyth高性價比透射光柵采用業界先進的設計和精確的光刻晶圓級制造技術，光學性能與低成本不斷刷新紀錄，為您的光學系統提供強大的競爭優勢。高衍射效率，低PDL和極具競爭力的價格為您提供世界上高性價比的透射光柵。
Description |
T-940-C |
T-966-C |
T-940-L |
T-940-CL |
Units |
Groove Density |
940.07 |
966.2 |
940.07 |
940.07 |
grooves/mm |
Operational Wavelength Range |
1526-1566
(C band) |
1526-1566
(C band) |
1570-1610
(L band) |
1526-1610
(C+L band) |
nm |
Optimum Incidence Angle |
46.5 |
48.3 |
48.4 |
47.5 |
degrees |
Groove Density Uniformity |
0.001 |
0.001 |
0.001 |
0.001 |
grooves/mm |
Diffraction Efficiency (s- and p-polarization) |
> 94 |
> 94 |
> 94 |
> 92 |
% |
Polarization Dependent Loss |
< 0.2 |
< 0.2 |
< 0.2 |
< 0.25 |
dB |
Spectral Non-Uniformity |
< 0.15 |
< 0.15 |
< 0.15 |
< 0.25 |
dB |
Spatial PDL Non-Uniformity |
< 0.1 |
< 0.1 |
< 0.1 |
< 0.1 |
dB |
| Type |
Substrate Size |
Clear Aperture |
Part Number |
| C band, 940 grooves/mm |
24 × 9 mm |
23 × 8 mm |
T-940C-2409-94 |
| |
24 × 14 mm |
23 × 13 mm |
T-940C-2414-94 |
| C band, 966 grooves/mm |
16 × 10 mm |
15 × 9 mm |
T-966C-1610-94 |
| |
27 × 10 mm |
26 × 9 mm |
T-966-C-2710-94 |
| |
24 × 16.4 mm |
23 × 15.4 mm |
T-966C-24x16.4-94 |
| L band, 940 grooves/mm |
27.4 × 10 mm |
26.4 × 9 mm |
T-940L-2710-94 |
| C+L band, 940 grooves/mm |
27.4 × 10 mm |
26.4 × 9 mm |
T-940CL-2710-92 |
高級反射光柵（電信）
LightSmyth使用電信級偏振分集光學設計和激光頻率穩定技術生產高效率反射光柵。采用投影光刻和反應性離子蝕刻技術在硅單晶基底上金屬化，以實現單極化的高效性能。每個光柵均設計為母光柵，而不是復制光柵，達到低散射光和持久性能目標。
- 單極化超高效率
- 采用高強度介電材料，不使用聚合物
- 每個光柵均是超低散射母光柵
- 高競爭力價格，Telcordia質量認證
Line Density |
Size |
Performance Grade |
Part Number |
1200 lines/mm |
12.5 × 12.5 mm |
High |
SLG-C12-1212A-Au-HP |
|
25 × 25 mm |
High |
SLG-C12-2525A-Au-HP |
標準反射光柵
- 每塊光柵都是高性能的母板，不使用聚合物
- 超低成本（低于復制光柵）
- 免費復制/缺陷檢測核定；超低散射
- 高強度單晶硅基板
- 近似于銅的熱導率
- 高硼硅玻璃，減少熱膨脹
Line Density
(lines/mm) |
λPE 1 |
Size |
Part number |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
12.5 mm × 12.5 mm |
SLG-C12-1212A-Al |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
25 mm × 25 mm |
SLG-C12-2525A-Al |
1200 |
580 nm (s), 1 μm to 1.55 μm (p) |
50 mm × 30 mm 2 |
SLG-C12-5030A-Al |
1800 |
390 nm (s), 660 nm to 1.0 μm (p) |
20 mm × 9 mm 2 |
SLG-C18-2009A-Al |
2400 |
300 nm (s),430 nm to 780 nm(p) |
12.5 mm × 12.5 mm |
SLG-C24-1212A-Al |
3600 |
240 nm (s), 480 nm (p) |
12.5 mm × 12.5 mm |
SLG-C36-1212A-Al |
X射線和深紫外光柵列表
Line Density
(lines/mm) |
Groove depth |
Size |
Part number |
7200 |
50 nm |
12.5 mm × 12.5 mm |
SLG-C72-1212A-Au |
7200 |
50 nm |
25 mm × 25 mm |
SLG-C72-2525A-Au |
7200 |
50 nm |
50 mm × 50 mm |
SLG-C72-5050A-Au |
脈沖壓縮透射光柵
脈沖壓縮光柵重要的性質是衍射效率高和低的波前變形，面向光柵的多通使用要求。激光脈沖壓縮傳輸光柵基于LightSmyth破紀錄的透射光柵平臺。優化的線性P-偏振衍射效率在94％以上，它可以讓我們的客戶小化系統光學損耗，尤其面向高能激光器。
優點
- 對指定的偏振有特殊的衍射效率
- 寬帶和低角度的敏感性特殊設計
- 超拋光石英基底使波前變形小化
- 使用熔融石英和高可靠介電材料
- 不使用聚合物或有機材料
- 每個光柵均為超低散射母光柵
Description |
LSFSG-1000 |
T-1200-850 |
T-1500-875 |
T-1850-915s |
T-1850-970s |
T-1600-976s |
T-1600-1060s |
Units |
Line Density |
1000 |
1208.46 |
1503.76 |
1851.851 |
1851.851 |
1600 |
1600 |
l/mm |
Operational Wavelength Range |
1040±20 |
850±20 |
875±20 |
915±10 |
970±10 |
976±10 |
1060±20 |
nm |
Optimum Angle of Incidence |
31.0 ± 1 |
30.7 ±1 |
41.0 ±1 |
57.9±1 |
63.9±1 |
51.3±1 |
58.0±1 |
° |
Line Density Uniformity (within grating) |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
0.001 |
l/mm |
Optimal Polarization |
any |
any |
any |
S- |
S- |
S- |
S- |
nm |
Diffraction Efficiency |
> 94 |
> 94 |
> 94 |
> 93 |
> 93 |
> 94 |
> 94 |
% |
| Line Density |
Wavelength, Polarization |
Substrate Size 1, 2 |
Part Number |
| 1000 lines/mm |
1040 nm, any |
31.8 × 12.3 mm |
LSFSG-1000-3212-94 |
|
|
31.8 × 24.8 mm |
LSFSG-1000-3225-94 |
|
|
130.0 × 12.3 mm |
LSFSG-1000-13012-94 |
|
|
130.0 × 20 mm |
LSFSG-1000-13020-94 |
|
|
up to 135 mm diameter |
LSFSG-1000-cust |
| 1200 lines/mm |
850 nm, any |
21.65 × 15.9 mm |
T-1200-850-2216-94 |
|
|
130.0 × 12.3 mm |
T-1200-850-13012-94 |
|
|
130.0 × 20 mm |
T-1200-850-13020-94 |
|
|
up to 135 mm diameter |
T-1200-850-cust |
| 1500 lines/mm |
875 nm, any |
24.8 × 15.9 mm |
T-1500-875-2516-94 |
|
|
130.0 × 12.3 mm |
T-1500-875-13012-94 |
|
|
130.0 × 20 mm |
T-1500-875-13020-94 |
|
|
up to 135 mm diameter |
T-1500-875-cust |
| 1850 lines/mm |
915 nm, S |
31.8 × 10.0 mm |
T-1850-915s-3210-93 |
|
|
31.8 × 20.2 mm |
T-1850-915s-3220-93 |
|
|
130.0 × 10.0 mm |
T-1850-915s-13010-93 |
|
|
130.0 × 20.2 mm |
T-1850-915s-13020-93 |
|
|
up to 135 mm diameter |
T-1850-915s-cust |
| 1850 lines/mm |
970 nm, S |
31.8 × 10.0 mm |
T-1850-970s-3210-93 |
|
|
31.8 × 20.2 mm |
T-1850-970s-3220-93 |
|
|
130.0 × 10.0 mm |
T-1850-970s-13010-93 |
|
|
130.0 × 20.2 mm |
T-1850-970s-13020-93 |
|
|
up to 135 mm diameter |
T-1850-970s-cust |
| 1600 lines/mm |
976 nm, S |
31.8 × 12.3 mm |
T-1600-976s-3212-94 |
|
|
40 × 10 mm |
T-1600-976s-4010-94 |
|
|
31.8 × 24.8 mm |
T-1600-976s-3225-94 |
|
|
130.0 × 12.3 mm |
T-1600-976s-13012-94 |
|
|
130.0 × 20 mm |
T-1600-976s-13020-94 |
|
|
up to 135 mm diameter |
T-1600-976s-cust |
| 1600 lines/mm |
1060 nm, S |
31.8 × 12.3 mm |
T-1600-1060s-3212-94 |
|
|
31.8 × 24.8 mm |
T-1600-1060s-3225-94 |
|
|
130.0 × 10 mm |
T-1600-1060s-13010-94 |
|
|
130.0 × 20 mm |
T-1600-1060s-13020-94 |
|
|
up to 135 mm diameter |
T-1600-1060s-cust |
Nanopatterned Silicon Stamps
LightSmyth提供種類繁多的納米制造單結晶硅基底，為納米光子學研究行業和學術機構提供了一個低成本應用的方案�？捎糜诟鞣N應用在光學、光子學、生物學、化學、物理學（如中子散射）、高分子材料研究、納米、微流體和其他的基板。如果需要的話，可以在基板進行金屬或介電材料鍍膜。大多數截面型材的表面特征略呈梯形，有直線平行的臺地和溝槽以及格狀結構�？商峁┒喾N特征尺寸和溝槽深度�；宓腟EM圖像，可以在裝運之前進行更新的確認。
| Description |
Value |
| Clear Aperture (CA) |
0.5 mm from substrate edge (the pattern may extend to the edge of the substrate) |
|
| Substrate Thickness |
0.675 ± 0.050 mm |
| Surface Quality in CA |
P/N ends with "-P": 60/40 scratch/dig: 0.06 mm maximum scratch width, 0.4 mm maximum dig diameter. up to 20/10 specification may be provided at a premium |
| Surface Quality in CA |
P/N ends with "-S": Discounted grade due to surface quality. Has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present |
| Surface Quality outside of CA |
no requirements |
| Material |
Single crystal silicon, reactive ion etch |
線性納米結構
| Period |
Groove depth |
Duty cycle 1 |
Line width 2 |
Size 3 |
Part number |
| 139 nm |
50 nm |
50% |
69.5 nm |
12.5×12.5×0.7 mm |
SNS-C72-1212-50-P |
| 139 nm |
50 nm |
50% |
69.5 nm |
25×25×0.7 mm |
SNS-C72-2525-50-P |
| 278 nm |
110 nm |
50% |
139 nm |
12.5×12.5×0.7 mm |
SNS-C36-1212-110-S |
| 416.6 nm |
110 nm |
50% |
208 nm |
12.5×12.5×0.7 mm |
SNS-C24-1212-110-P |
| 500 nm |
multiple |
44% |
220 nm |
8×8.3×0.7 mm |
SNS-C20-0808-xxx-D45-P |
| 500 nm |
multiple |
60% |
300 nm |
8×8.3×0.7 mm |
SNS-C20-0808-xxx-D60-P |
| 555.5 nm |
110 nm |
50% |
278 nm |
20×9×0.7 mm |
SNS-C18-2009-110-D50-P |
| 555.5 nm |
140 nm |
50% |
278 nm |
20×9×0.7 mm |
SNS-C18-2009-140-D50-P |
| 555.5 nm |
110 nm |
29% |
158 nm |
20×9×0.7 mm |
SNS-C18-2009-110-D29-P |
| 555.5 nm |
140 nm |
29% |
158 nm |
20×9×0.7 mm |
SNS-C18-2009-140-D29-P |
| 600 nm |
multiple |
43% |
260 nm |
8×8.3×0.7 mm |
SNS-C16.7-0808-xxx-D45-P |
| 600 nm |
multiple |
55% |
330 nm |
8×8.3×0.7 mm |
SNS-C16.7-0808-xxx-D55-P |
| 606 nm |
190 nm |
50% |
303 nm |
29×12×0.7 mm |
SNS-C16.5-2912-190-P |
| 606 nm |
190 nm |
50% |
303 nm |
29×12×0.7 mm |
SNS-C16.5-2912-190-S |
| 606 nm |
190 nm |
50% |
303 nm |
29×24.2×0.7 mm |
SNS-C16.5-2924-190-P |
| 675 nm |
170 nm |
32% |
218 nm |
24×10×0.7 mm |
SNS-C14.8-2410-170-P |
| 675 nm |
170 nm |
32% |
218 nm |
24×30.4×0.7 mm |
SNS-C14.8-2430-170-P |
| 700 nm |
multiple |
47% |
330 nm |
8×8.3×0.7 mm |
SNS-C14.3-0808-xxx-D45-P |
| 700 nm |
multiple |
55% |
375 nm |
8×8.3×0.7 mm |
SNS-C14.3-0808-xxx-D55-P |
| 833.3 nm |
200 nm |
50% |
416 nm |
12.5×12.5×0.7 mm |
SNS-C12-1212-200-P |
| 833.3 nm |
200 nm |
50% |
416 nm |
25×25×0.7 mm |
SNS-C12-2525-200-P |
2維納米模板
| Period |
Lattice type |
Groove depth |
Feature width |
Size |
Part number |
| 500 nm |
rect post |
multiple |
135 nm |
8×8.3×0.7 mm |
S2D-24B1-0808-xxx-P |
| 500 nm |
rect post |
multiple |
210 nm |
8×8.3×0.7mm |
S2D-18B1-0808-xxx-P |
| 600 nm |
rect post |
multiple |
195 nm |
8×8.3×0.7mm |
S2D-24B2-0808-xxx-P |
| 600 nm |
rect post |
multiple |
275 nm |
8×8.3×0.7mm |
S2D-18B2-0808-xxx-P |
| 700 nm |
rect post |
multiple |
260 nm |
8×8.3×0.7mm |
S2D-24B3-0808-xxx-P |
| 700 nm |
rect post |
multiple |
350 nm |
8×8.3×0.7mm |
S2D-18B3-0808-xxx-P |
| 500 nm |
hex post |
multiple |
165 nm |
8×8.3×0.7mm |
S2D-18C1-0808-xxx-P |
| 600 nm |
hex post |
multiple |
165 nm |
8×8.3×0.7mm |
S2D-24C2-0808-xxx-P |
| 600 nm |
hex post |
multiple |
240 nm |
8×8.3×0.7mm |
S2D-18C2-0808-xxx-P |
| 700 nm |
hex post |
multiple |
220 nm |
8×8.3×0.7mm |
S2D-24C3-0808-xxx-P |
| 700 nm |
hex post |
multiple |
290 nm |
8×8.3×0.7mm |
S2D-18C3-0808-xxx-P |
| 600 nm |
hex hole |
multiple |
180 nm |
8×8.3×0.7mm |
S2D-24D2-0808-xxx-P |
| 700 nm |
hex hole |
multiple |
200 nm |
8×8.3×0.7mm |
S2D-18D3-0808-xxx-P |
| 700 nm |
hex hole |
multiple |
290 nm |
8×8.3×0.7mm |
S2D-24D3-0808-xxx-P |
|
線陣CCD光纖光譜儀
